Description: XeF2 (Xenon Difluoride) is isotropic silicon etching media selective to most other materials. The system can constantly input vaporized XeF2 into reaction chamber and exhaust the etching end product at certain temperature and pressure.
Deep reactive ion etcher (DRIE)
Description: This is a semiconductor fabrication tool designed for high-aspect-ratio anisotropic etching, critical for MEMS, sensors, and advanced packaging. It supports 200mm wafers and employs the Bosch process (alternating etch/passivation cycles) to achieve etch rates of 8–12 µm/min in silicon, with aspect ratios up to 30:1.
Description: The PE-50 is a compact tabletop plasma cleaner designed for surface preparation, cleaning, and activation of materials. Manufactured by Plasma Etch, it operates using air or various process gases to generate plasma in a low-pressure chamber. The system is well-suited for removing organic contamination, enhancing surface wettability, or improving adhesion for bonding or coating applications. Its fully automated control system allows for precise process tuning, while the benchtop design makes it ideal for research labs and small-scale fabrication environments.
Description: The BMR HiEtch ICP-Etcher is a high-density plasma etching system designed for precision microfabrication. Using inductively coupled plasma (ICP), it enables anisotropic etching of materials like silicon, silicon dioxide, silicon nitride, and compound semiconductors (e.g., GaN, GaAs).
