Murrae Bowden receives Award
Murrae J. Bowden, Distinguished Service Professor and Program Director Howe School of Technology Management, Stevens Institute of Technology, has been named the winner of Photopolymer Science and Technology Award – 2013 Outstanding Achievement Award sponsored by the Japan Society of Photopolymer Science and Technology. He was cited for his outstanding achievements in photopolymer science and technology, involving the “development of new advanced resist materials for microelectronics.” He received the award at the International Conference of Photopolymer Science and Technology (ICPST 30), Chiba, Japan June 25-28, 2013.
Dr. Bowden is being recognized for his pioneering work in the area of resist materials for microlithography conducted at AT&T Bell Laboratories (1971-1983) and Bell Communications Research (1984-1997), and later at Arch Chemicals (1997 – 2003) where he was Director of R&D. Over this period he was associated with the discovery and development of a number of electron-beam resists that have had major impact on the lithographic industry.
PBS electron beam resist with whose development he was most closely associated, and for which he received an IR-100 Award in 1977 was used by the photolithographic mask-making industry for over 30 years to make the photomasks used worldwide in integrated circuit manufacture. He is recognized as one of the leading practitioners of the art, and has been honored with numerous awards including 1988 Outstanding American Inventor and Finalist in the Inventor-of-the-Year Competition sponsored by the Intellectual Property Owners Association for his work on resist materials for production of advanced integrated circuits. He was a co-recipient of the 1992 Carothers Award by the Delaware Section of the American Chemical Society, and was selected in 1992 as a New Jersey Inventor-of-the-Year by the New Jersey Inventors Congress and Hall of Fame for contributions to science and industry.