|
Stevens Institute of Technology Phone: (201)216-5269 |
 |
| Home Page | Faculty Page | Publications | Research Projects |
Gerald M. Rothberg, Ph.D.
Professor
|
Stevens Institute of Technology Phone: (201)216-5269 |
|
RESEARCH INTERESTS
Prof. Rothberg's research is in two areas, ultrathin magnetic films and the geometry of molecular interactions on surfaces. In collaboration with scientists at Bell Communication Research and the University of Tokyo his group have used molecular beam epitaxy to prepare new ferromagnet/semiconductor composites whose novel properties offer the potential for new kinds of electronic and optoelectronic devices combining magnetic behavior, and then to optimize the materials for specific functions combining magnetic properties of the ferromagnet with electronic properties of the semiconductor. It is necessary to understand the science of these materials, for example, in the relation of film strucutre to magnetic behavior, and then to optimize the materials for specific functions. Techniques Rothberg uses include X-ray diffractometry, atomic force microscopy, magnetometry, magneto-optical, magnetoresistance, and Hall effect measurements.
The second area, surface chemical reactions, makes use of a technique Rothberg's group invented to study the geometrical relations between atoms and molecules interacting on and with solid surfaces. For example, a fraction of an atomic layer of potassium on a surface can increase the oxidation rate of that material by several orders of magnitude. To understand the chemistry of such phenomena, it is valuable to know where are the ineracting atoms in relation of each other. Rothberg's technique makes it possible to get such informaiton. Because synchrotron radiation is required, part of Rothberg's research has been carried out at the National Synchrotron Light Source at Brookhaven National Laboratories on Long Island, the Stanford Synchrotron Radiation Laboratory in California, the Photon Factory in Tsukuba, Japan and BESSY in Berlin, Germany
SELECTED PUBLICATIONS
"Molecular beam epitaxy of MnAs thin films on GaAs," M. Tanaka et al., J. Vac. Sci.Technol, B12, 1091 (1994).
"Epitaxial orientation and magnetic properties of MnAs thin films grown on (001) GaAs: Template effects," M. Tanaka et al., Appl. Pys. Lett. 65, 1964 (1994).
"Epitaxial ferromagnetic MnAs thin films grown by molecular-beam epitaxy on GaAs: Stucture and magnetic properties," M. Tanaka et al., J. Apppl. Phys. 76, 6278 (1994).
"Galvanomagnetic properties and magnetic domain structure of epitaxial MnAs films on GaAs(001)," M. C. Park et al., J. Appl. Phys., to be published.